*SPICE MODELS FOR RIT DEVICES - DR. LYNN FULLER 3-30-2010 *LOCATION DR.FULLER'S COMPUTER DESKTOP/SPICE/MODELS/FULLER_RIT_MOSFET_MODELS.txt *SEE: http://people.rit.edu/lffeee/CMOS.htm * *LIST OF DEVICES/MODELS INCLUDED IN THIS LIBRARY * * RITMEMDIODE DIODE MODEL FOR EMCR870 MEMS FABRICATION COURSE * RITPMOS7 LEVEL 7 MODEL FOR PMOSFET MADE IN RIT PMOS PROCESS * RITPMOS49 LEVEL 49 MODEL FOR PMOSFET MADE IN RIT PMOS PROCESS * RITSUBN1 LEVEL 1 MODEL FOR NMOSFET MADE IN RIT SUB-CMOS PROCESS * RITSUBP1 LEVEL 1 MODEL FOR PMOSFET MADE IN RIT SUB-CMOS PROCESS * RITSUBN3 LEVEL 3 MODEL FOR NMOSFET MADE IN RIT SUB-CMOS PROCESS * RITSUBP3 LEVEL 3 MODEL FOR PMOSFET MADE IN RIT SUB-CMOS PROCESS * RITSUBN7 LEVEL 7 MODEL FOR NMOSFET MADE IN RIT SUB-CMOS PROCESS * RITSUBP7 LEVEL 7 MODEL FOR PMOSFET MADE IN RIT SUB-CMOS PROCESS * RITSUBN49 LEVEL 49 MODEL FOR NMOSFET MADE IN RIT SUB-CMOS PROCESS * RITSUBP7 LEVEL 49 MODEL FOR PMOSFET MADE IN RIT SUB-CMOS PROCESS * CMOSN LEVEL 2 MODEL FOR NMOSFET ORBIT SEMICONDUCTOR * CMOSP LEVEL 2 MODEL FOR PMOSFET ORBIT SEMICONDUCTOR * EENMOS LEVEL=2 MODEL FOR NMOSFET USED IN EEEE481 ELECTRONICS I LABS * QRITNPN NPN BJT MODEL USED IN EMCR482 ELECTRONICS II * note: Level 7 and Level 49 are the same except for two extra parameters in level 49 * PSpice does not recognize level 49, WinSpice does not recognize level 7 * .model RITMEMDIODE D IS=3.02E-9 N=1 RS=207 +VJ=0.6 CJO=200e-12 M=0.5 BV=400 * *1-17-2010 .MODEL RITPMOS7 PMOS (LEVEL=7 VERSION=3.1 CAPMOD=2 MOBMOD=1 +TOX=7.0E-8 XJ=2.76E-6 NCH=1.56E15 NSUB=1.56E15 XT=7.07E-7 NSS=3E11 PCLM=5 *+XWREF= -0.5E-6 XLREF=4.41E-6 +VTH0=-0.8 U0= 600 WINT=2.0E-7 LINT=2.26E-6 NGATE=5E20 +RSH=120 JS=3.35E-7 JSW=3.35E-7 CJ=1.8E-4 MJ=0.5 PB=0.88 +CJSW=4.97E-10 MJSW=0.5 PBSW=0.88 +CGSO=1.09E-10 CGDO=1.09E-10 CGB0=6.90E-10) * *1-17-2010 .MODEL RITPMOS49 PMOS (LEVEL=49 VERSION=3.1 CAPMOD=2 MOBMOD=1 +TOX=7.0E-8 XJ=2.76E-6 NCH=1.56E15 NSUB=1.56E15 XT=7.07E-7 NSS=3E11 PCLM=5 +XWREF= -0.5E-6 XLREF=4.41E-6 +VTH0=-0.8 U0= 600 WINT=2.0E-7 LINT=2.26E-6 NGATE=5E20 +RSH=120 JS=3.35E-7 JSW=3.35E-7 CJ=1.8E-4 MJ=0.5 PB=0.88 +CJSW=4.97E-10 MJSW=0.5 PBSW=0.88 +CGSO=1.09E-10 CGDO=1.09E-10 CGBO=6.90E-10) * *2-15-2009 .MODEL RITSUBN1 NMOS (LEVEL=1 +VTO=1.0 LAMBDA= 0.031 PB=0.95 CGSO=3.4E-10 CGDO=3.4E-10 +CGBO=5.75E-10 RSH=1082 CJ=6.8e-4 MJ=0.5 CJSW=1.26e-10 +MJSW=0.5 JS=3.23e-8 TOX=150E-10 NSUB=1.45e17 NSS=3E11 +TPG=+1 XJ=0.18U LD=0.15U UO=363) * *2-15-2009 .MODEL RITSUBP1 PMOS (LEVEL=1 +VTO=-1.0 LAMBDA= 0.05 PB=0.94 CGSO=5.08E-10 CGDO=5.08E-10 +CGBO=5.75E-10 RSH=33.7 CJ=5.01e-4 MJ=0.5 CJSW=1.38e-10 +MJSW=0.5 JS=6.43e-8 TOX=150E-10 NSUB=7.23e16 NSS=1E11 +TPG=-1 XJ=0.28U LD=0.22U UO=463) * *1-15-2007 FROM DR. FULLER'S SPREAD SHEET .MODEL RITSUBN3 NMOS (LEVEL=3 +TPG=1 TOX=1.5E-8 LD=2.95E-7 WD=3.00E-7 +UO= 726 VTO=1.0 THETA=0.349 RS=27 RD=27 DELTA=2.27 NSUB=1.45E17 +XJ=1.84E-7 VMAX=1.10E7 ETA=0.837 KAPPA=0.508 NFS=3E11 +CGSO=3.4E-10 CGDO=3.48E-10 CGBO=5.75E-10 PB=0.95 XQC=0.4) * *1-17-2007 FROM DR. FULLER'S SPREAD SHEET .MODEL RITSUBP3 PMOS (LEVEL=3 +TPG=-1 TOX=1.5E-8 LD=3.61E-7 WD=3E-7 +UO=377 VT0=-1.0 THETA=0.237 RS=33.7 RD=33.7 DELTA=2.35 NSUB=7.12E16 +XJ=2.26E-7 VMAX=6.56E6 ETA=0.762 KAPPA=4.481 NFS=3E11 +CGSO=4.15E-10 CGDO=4.15E-10 CGBO=5.75E-10 PB=0.94 XQC=0.40) * *2-15-2009 .MODEL RITSUBN7 NMOS (LEVEL=7 +VERSION=3.1 CAPMOD=2 MOBMOD=1 +TOX=1.5E-8 XJ=1.84E-7 NCH=1.45E17 NSUB=5.33E16 XT=8.66E-8 NSS=3E11 *+XWREF=2.0E-7 XLREF=2.95E-7 +VTH0=1.0 U0= 600 WINT=2.0E-7 LINT=1E-7 +NGATE=5E20 RSH=1082 JS=3.23E-8 JSW=3.23E-8 CJ=6.8E-4 MJ=0.5 PB=0.95 +CJSW=1.26E-10 MJSW=0.5 PBSW=0.95 PCLM=5 +CGSO=3.4E-10 CGDO=3.4E-10 CGBO=5.75E-10) * *1-17-2007 .MODEL RITSUBP7 PMOS (LEVEL=7 +VERSION=3.1 CAPMOD=2 MOBMOD=1 +TOX=1.5E-8 XJ=2.26E-7 NCH=7.12E16 NSUB=3.16E16 XT=8.66E-8 NSS=3E11 PCLM=5 *+XWREF= 2.0E-7 XLREF=3.61E-7 +VTH0=-1.0 U0= 376.72 WINT=2.0E-7 LINT=2.26E-7 NGATE=5E20 +RSH=1347 JS=3.51E-8 JSW=3.51E-8 CJ=5.28E-4 MJ=0.5 PB=0.94 +CJSW=1.19E-10 MJSW=0.5 PBSW=0.94 +CGSO=4.5E-10 CGDO=4.5E-10 CGBO=5.75E-10) * *2-15-2009 .MODEL RITSUBN49 NMOS (LEVEL=49 +VERSION=3.1 CAPMOD=2 MOBMOD=1 +TOX=1.5E-8 XJ=1.84E-7 NCH=1.45E17 NSUB=5.33E16 XT=8.66E-8 NSS=3E11 +XWREF=2.0E-7 XLREF=2.95E-7 +VTH0=1.0 U0= 600 WINT=2.0E-7 LINT=1E-7 +NGATE=5E20 RSH=1082 JS=3.23E-8 JSW=3.23E-8 CJ=6.8E-4 MJ=0.5 PB=0.95 +CJSW=1.26E-10 MJSW=0.5 PBSW=0.95 PCLM=5 +CGSO=3.4E-10 CGDO=3.4E-10 CGBO=5.75E-10) * *1-17-2007 .MODEL RITSUBP49 PMOS (LEVEL=49 +VERSION=3.1 CAPMOD=2 MOBMOD=1 +TOX=1.5E-8 XJ=2.26E-7 NCH=7.12E16 NSUB=3.16E16 XT=8.66E-8 NSS=3E11 PCLM=5 +XWREF= 2.0E-7 XLREF=3.61E-7 +VTH0=-1.0 U0= 376.72 WINT=2.0E-7 LINT=2.26E-7 NGATE=5E20 +RSH=1347 JS=3.51E-8 JSW=3.51E-8 CJ=5.28E-4 MJ=0.5 PB=0.94 +CJSW=1.19E-10 MJSW=0.5 PBSW=0.94 +CGSO=4.5E-10 CGDO=4.5E-10 CGBO=5.75E-10) * *3-23-2009 *From Dr. Pearson's VLSI Class *SPICE Level 2 Parameters for Supertex's (formerly Orbit Semiconductor's) *2.0um MOSIS SCNA20 Process (from N7CK production run) * .MODEL CMOSN NMOS LEVEL=2 PHI=0.7 TOX=4.08E-8 XJ=0.2 TPG=1 +VTO=0.8096 DELTA=4.586 LD=2.972E-7 KP=5.3532E-5 +UO=632.5 UEXP=0.1328 UCRIT=3.897E4 RSH=6.202 +GAMMA=0.5263 NSUB=5.977E15 NFS=5.925e11 VMAX=5.83E4 +LAMBDA=3.903E-2 CGDO=3.7731E-10 CGSO=3.7731E-10 +CGBO=3.4581E-10 CJ=1.3679E-4 MJ=0.63238 CJSW=5.1553E-10 +MJSW=0.26805 PB=0.4 *Weff=Wdrawn-Delta_W *The suggested Delta_W is 2.00E-9 * *3-23-2009 *From Dr. Pearson's VLSI Class *SPICE Level 2 Parameters for Supertex's (formerly Orbit Semiconductor's) *2.0um MOSIS SCNA20 Process (from N7CK production run) * .MODEL CMOSP PMOS LEVEL=2 PHI=0.7 TOX=4.08E-8 XJ=0.2 TPG=-1 +VTO=-0.8483 DELTA=1.952 LD=3.431E-7 KP=1.779E-5 +UO=210.2 UEXP=0.4659 UCRIT=1.324E5 RSH=0.10960 +GAMMA=0.5263 NSUB=5.977E15 NFS=5.925e11 VMAX=5.83E4 +LAMBDA=6.372E-2 CGDO=4.3558E-10 CGSO=4.3558E-10 +CGBO=3.5957E-10 CJ=3.1646E-4 MJ=0.59954 CJSW=3.4394E-10 +MJSW=0.21153 PB=0.9 *Weff=Wdrawn-Delta_W *The suggested Delta_W is 5.72E-8 * * * From Electronics I EEEE481 .model EENMOS NMOS LEVEL=2 +VTO=0.7 KP=25E-6 LAMBDA=0.02 GAMMA=0.9 TOX=90E-9 NSUB=3.7E15 * * * From Electronics II EEEE482 .MODEL QRITNPN NPN (BF=416 IKF=.06678 ISE=6.734E-15 IS=6.734E-15 NE=1.259 RC=1 RB=10 VA=109)